In Situ Pyrometric Interferometry for Molecular Beam Epitaxy of AlxGa1-xN on Si (111)
- 著者名:
- 掲載資料名:
- GaN and related alloys - 2000 : symposium held November 27-December 1, 2000, Boston, Massachusetts, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 639
- 発行年:
- 2001
- 総ページ数:
- 5
- 出版情報:
- Warrendale, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558995499 [1558995498]
- 言語:
- 英語
- 請求記号:
- M23500/639
- 資料種別:
- 国際会議録
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GROWTH OF GaAs, InxGa1-xAs, AND AlxGa1-xAs ON GaAs(111)B SUBSTRATES BY MOLECULAR BEAM EPITAXY
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TEMPERATURE DEPENDENCE OF MORPHOLOGY OF InP FILMS GROWN BY METALORGANIC MOLECULAR BEAM EPITAXY
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