Nonlinear Transient Finite Element Analysis of the Relaxation Mechanisms in Strained Silicon Grown on SiGe Virtual Substrate

Nonlinear Transient Finite Element Analysis of the Relaxation Mechanisms in Strained Silicon Grown on SiGe Virtual Substrate

著者名:

掲載資料名:

Thin films : stresses and mechanical properties XI : symposium held March 28-April 1, 2005, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

875

発行年:

2005

開始ページ:

409

終了ページ:

416

総ページ数:

8

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558998292 [1558998292]

言語:

英語

請求記号:

M23500/875

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014514
シリーズID:	PA00000011
会議名:	MRS Spring Meeting
回次:	2005
会議開催地:	San Francisco, California, U.S.A.
会議開催年:	2005.03.28-2005.04.01

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