Effects of Silicon Nitride Passivation Layer on Mean Dark Current and Quantum Efficiency of CMOS Active Pixel Sensors

Effects of Silicon Nitride Passivation Layer on Mean Dark Current and Quantum Efficiency of CMOS Active Pixel Sensors

著者名:

掲載資料名:

Semiconductor defect engineering - materials, synthetic structures and devices : symposium held March 28-April 1, 2005, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

864

発行年:

2005

開始ページ:

443

終了ページ:

448

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558998179 [1558998179]

言語:

英語

請求記号:

M23500/864

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014508
シリーズID:	PA00000011
会議名:	MRS Spring Meeting
回次:	2005
会議開催地:	San Francisco, California, U.S.A.
会議開催年:	2005.03.28-2005.04.01

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