P-N Junction Diodes Fabricated Based on Donor Formation in Plasma Hydrogenated P-Type Czochralski Silicon
- 著者名:
Huang, Y.L. Simoen, E. Job, R. Claeys, C. Dungen, W. Ma, Y. Fahrner, W.R. Versluys, J. Clauws, P. - 掲載資料名:
- Semiconductor defect engineering - materials, synthetic structures and devices : symposium held March 28-April 1, 2005, San Francisco, California, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 864
- 発行年:
- 2005
- 開始ページ:
- 307
- 終了ページ:
- 312
- 総ページ数:
- 6
- 出版情報:
- Warrendale, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558998179 [1558998179]
- 言語:
- 英語
- 請求記号:
- M23500/864
- 資料種別:
- 国際会議録
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11
国際会議録
Hydrogen Enhanced Thermal Donor Formation in p-Type Czochralski Silicon with a Denuded Zone
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