N+/P and P+/N Junctions in Strained Si on Thin Strain Relaxed SiGe Buffers: the Effect of Defect Density and Layer Structure

N+/P and P+/N Junctions in Strained Si on Thin Strain Relaxed SiGe Buffers: the Effect of Defect Density and Layer Structure

著者名:

Eneman, G.

掲載資料名:

Semiconductor defect engineering - materials, synthetic structures and devices : symposium held March 28-April 1, 2005, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

864

発行年:

2005

開始ページ:

119

終了ページ:

124

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558998179 [1558998179]

言語:

英語

請求記号:

M23500/864

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014508
シリーズID:	PA00000011
会議名:	MRS Spring Meeting
回次:	2005
会議開催地:	San Francisco, California, U.S.A.
会議開催年:	2005.03.28-2005.04.01

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