A study of V3+ and the vanadium acceptor level in semi-insulating 6H-SiC
- 著者名:
- 掲載資料名:
- Semiconductor defect engineering - materials, synthetic structures and devices : symposium held March 28-April 1, 2005, San Francisco, California, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 864
- 発行年:
- 2005
- 開始ページ:
- 15
- 終了ページ:
- 20
- 総ページ数:
- 6
- 出版情報:
- Warrendale, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558998179 [1558998179]
- 言語:
- 英語
- 請求記号:
- M23500/864
- 資料種別:
- 国際会議録
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9
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Characterization of Defects in Semi-Insulating 6H-SiC Substrates Using IR Thermal Imaging Camera
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