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A study of V3+ and the vanadium acceptor level in semi-insulating 6H-SiC

著者名:
掲載資料名:
Semiconductor defect engineering - materials, synthetic structures and devices : symposium held March 28-April 1, 2005, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
864
発行年:
2005
開始ページ:
15
終了ページ:
20
総ページ数:
6
出版情報:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558998179 [1558998179]
言語:
英語
請求記号:
M23500/864
資料種別:
国際会議録

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