Gate Oxide Integrity for Polysilicon Thin-Film Transistors: A Comparative Study for ELC, MILC, and SPC Crystallized Active Polysilicon Layer

Gate Oxide Integrity for Polysilicon Thin-Film Transistors: A Comparative Study for ELC, MILC, and SPC Crystallized Active Polysilicon Layer

著者名:

Choi, D.C.

掲載資料名:

Amorphous and nanocrystalline silicon science and technology - 2005 : symposium held March 28-April 1, 2005, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

862

発行年:

2005

開始ページ:

647

終了ページ:

652

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558998155 [1558998152]

言語:

英語

請求記号:

M23500/862

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014506
シリーズID:	PA00000011
会議名:	MRS Spring Meeting
回次:	2005
会議開催地:	San Francisco, California, U.S.A.
会議開催年:	2005.03.28-2005.04.01

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