P-Type GaN Epitaxial Layers and AlGaN/GaN Heterostructures with High Hole Concentration and Mobility Grown by HVPE
- 著者名:
Usikov, A. Kovalenkov, O. Ivantsov, V. Sukhoveev, V. Dmitriev, V. Shmidt, N. Poloskin, D. Petrov, V. Ratnikov, V. - 掲載資料名:
- GaN, AIN, InN and their alloys : symposium held November 29-December 3, 2004, Boston, Massachusetts, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 831
- 発行年:
- 2005
- 開始ページ:
- 453
- 終了ページ:
- 458
- 総ページ数:
- 6
- 出版情報:
- Warrendale, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558997790 [1558997792]
- 言語:
- 英語
- 請求記号:
- M23500/831
- 資料種別:
- 国際会議録
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10
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