Mechanism of Metalorganic MBE Growth of High Quality AlN on Si (111)

Mechanism of Metalorganic MBE Growth of High Quality AlN on Si (111)

著者名:

Gherasoiu, I.

掲載資料名:

GaN, AIN, InN and their alloys : symposium held November 29-December 3, 2004, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

831

発行年:

2005

開始ページ:

227

終了ページ:

232

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558997790 [1558997792]

言語:

英語

請求記号:

M23500/831

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014485
シリーズID:	PA00000011
会議名:	Symposium on gan, ain, inn and their alloys
回次:	2004
会議開催地:	Boston, MA, USA
会議開催年:	2004.11.29-2004.12.03

類似資料:

1 国際会議録 Optical Properties of AlN/AlGa(In)N Short Period Superlattices -Deep UV Light Emitting Diodes Holtz, M., Ahmad, I., Kuryatkov, V.V., Borisov, B.A., Kipshidze, G.D., Chandolu, A., Nikishin, S.A., Temkin, H. Materials Research Society	7 国際会議録 Deep UV Light Emitting Diodes Based on Short Period Superlattices of AlN/AlGaN Temkin, H., Nikishin, S. A., Holtz, M., Chernyak, L. Electrochemical Society
2 国際会議録 Preparation of Optoelectronic Devices Based on AlN/AlGaN Superlattices Holtz, M., Kipshidze, G., Chandolu, A., Yun, J., Borisov, B., Kuryatkov, V., Zhu, K., Chu, S.N.G., Nikishin, S.A., … Materials Research Society	8 国際会議録 High Quality AIN and GaN of Si(III) by MBE with Ammonia Nikishin, S., Faleev, N., Chu, S.N.G., Temkin, H. Electrochemical Society
3 国際会議録 Gas Source Molecular Beam Epitaxy of High Quality AlGaN on Si and Sapphire Nikishin, S., Kipshidze, G., Kuryatkov, V., Zubrilov, A., Choi, K., Gherasoiu, Iu., Peralta, L. Grave de, Prokofyeva, … Materials Research Society	9 国際会議録 Micro-Raman Scattering From Hexagonal GaN, AlN, and AlxGa1-xN Grown on (111) Oriented Silicon: Stress Mapping of Cracks Ramkumar, C., Prokofyeva, T., Seon, M., Holtz, M., Choi, K., Yun, J., Nikishin, S.A., Temkin, H. Materials Research Society
4 国際会議録 Short-Period AlGaN Based Superlattices for Deep UV Light Emitting Diodes Grown By Gas Source Molecular Beam Epitaxy Nikishin, S. A., Borisov, B. A., Kuryatkov, V. V., Holtz, M., Temkin, H. Materials Research Society	10 国際会議録 Enhanced luminescence from AlxGa1-xN/AlyGa1-yN quantum wells grown by gas source molecular beam epitaxy with ammonia S. A. Nikishin, B. A. Borisov, G. A. Garrett, W. L. Sarney, A. V. Sampath, H. Shen, M. Wraback, M. Holtz SPIE - The International Society of Optical Engineering
5 国際会議録 High-quality AlN and GaN grown on Si(111) by gas source molecular beam epitaxy with ammonia Nikishin, S. A., Faleev, N. N., Antipov, V. G., Francoeur, S., Peralta, L. Grave de, Seryogin, G. A., Holtz, M., … MRS-Materials Research Society	11 国際会議録 AlN Periodic Multiayer Structures Grown by MOVPE for High Quality Buffer Layer Vladimir Kuryatkov, Wen Feng, Mahesh Pandikunta, Dana Rosenbladt, Boris Borisov, Sergey A. Nikishin, Mark Holtz Materials Research Society
6 国際会議録 Dielectric function of AlN grown on Si(111) by MBE Zollner, S., Konkar, A., Gregory, R. B., Wilson, S. R., Nikishin, S. A., Temkin, H. MRS-Materials Research Society	12 国際会議録 Bonded Polycrystalline SiC Substrates for the Growth and Fabrication of GaN FETs Hobart, K.D., Kub, F.J., Esser, R., Jernigan, G.G., Fatemi, M., Binari, S.C., Katzer, D.S., Dietrich, H.B., Kipshidze, … Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12