A Study of Anion Exchange Reactions at GaAs Surfaces for Heterojunction Interface Control

A Study of Anion Exchange Reactions at GaAs Surfaces for Heterojunction Interface Control

著者名:

Losurdo, Maria

掲載資料名:

Progress in compound semiconductor materials -- electronic and optoelectronic applications

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

799

発行年:

2004

開始ページ:

97

終了ページ:

102

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558997370 [1558997377]

言語:

英語

請求記号:

M23500/799

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014471
シリーズID:	PA00000011
会議名:	MRS Fall Meeting
回次:	2003
会議開催地:	Boston, MA,USA
会議開催年:	2003.12.01-2003.12.04

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