Manifestation of Structural Defects in Photoluminescence From GaN.

Manifestation of Structural Defects in Photoluminescence From GaN.

著者名:

Reshchikov, M.A.

掲載資料名:

GaN and related alloys - 2003 : symposium held December 1-5, 2003, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

798

発行年:

2004

開始ページ:

683

終了ページ:

688

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558997363 [1558997369]

言語:

英語

請求記号:

M23500/798

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014470
シリーズID:	PA00000011
会議名:	Symposium on GaN and related alloys
回次:	2003
会議開催地:	Boston, MA, USA
会議開催年:	2003.12.01-2003.12.05

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2 国際会議録 Optical Properties of GaN with Ga and N Polarity Reshchikov, M.A., Huang, D., Yun, F., Visconti, P., King, T., Morkoc, H., Jasinski, J., Liliental-Weber, Z. Materials Research Society	8 国際会議録 Photoluminescence Study of Deep-Level Defects in Undoped GaN Reshchikov, M.A., Morkoc, H., Park, S.S., Lee, K.Y. Materials Research Society
3 国際会議録 Microstructures Of GaN And InXGa1-XN Films Grown By MOCVD On GaN Templates Jasinski, J., Liliental-Weber, Z., Huang, D., Reshchikov, M.A., Yun, F., Morkoc, H., Sone, C., Park, S.S., Lee, K.Y. Materials Research Society	9 国際会議録 Excitons Bound to Surface Defects in GaN Reshchikov, M.A., Huang, D., Morkoc, H. Materials Research Society
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