Electron Micro-Probe Analysis and Cathodoluminescence Spectroscopy of Rare Earth-Implanted GaN | 東京工業大学附属図書館文献データベース

Blank Cover Image

Electron Micro-Probe Analysis and Cathodoluminescence Spectroscopy of Rare Earth-Implanted GaN

著者名:

O'Donnell, K.P.

さらに 9 件

掲載資料名:

GaN and related alloys - 2003 : symposium held December 1-5, 2003, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

798

発行年:

2004

開始ページ:

429

終了ページ:

434

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558997363 [1558997369]

言語:

英語

請求記号:

M23500/798

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014470
シリーズID:	PA00000011
会議名:	Symposium on GaN and related alloys
回次:	2003
会議開催地:	Boston, MA, USA
会議開催年:	2003.12.01-2003.12.05

類似資料:

1 国際会議録 High Temperature Implantation of Tm in GaN Lorenz, K., Wahl, U., Alves, E., Dalmasso, S., Martin, R.W., O'Donnell, K.P. Materials Research Society	7 国際会議録 X-ray Excited Optical Luminescence studies of InGaN and rare-earth doped GaN epilayers Katchkanov, V., Mosselmans, J. F. W., O'Donnell, K. P., Poolton, N. R. J., Hernandez, S. Materials Research Society
2 国際会議録 Processing of Rare Earth Doped GuN With Ion Beams Lorenz, K., Wahl, U., Alves, E., Wojtowicz, T., Ruterana, P., Dalmasso, S., Martin, R.W., O'Donnell, K.P., Ruffenach, … Materials Research Society	8 国際会議録 Site Multiplicity of Rare Earth Ions in III-Nitrides O'Donnell, K. P., Katchkanov, V., Wang, K., Martin, R. W., Edwards, P. R., Hourahine, B., Nogales, E., Mosselmans, J. F. … Materials Research Society
3 国際会議録 Electron Microprobe and Photoluminescence Analysis of Europium-Doped Gallium Nitride Light Emitters Martin, R.W., Dalmasso, S., O'Donnell, K.P., Nakanishi, Y., Wakahara, A., Yoshida, A., the RENiBEl Network Materials Research Society	9 国際会議録 Characterization of InGaN and InAlN Epilayers by Microdiffraction X-Ray Reciprocal Space Mapping V. Kachkanov, I.P. Dolbnya, K.P. O'Donnell, K. Lorenz, S. Pereira, R.W. Martin, P.R. Edwards, I.M. Watson Materials Research Society
4 国際会議録 Influence of the Annealing Ambient on Structural and Optical Properties of Rare Earth Implanted GaN Lorenz, K., Nogales, E., Nedelec, R., Penner, J., Vianden, R., Alves, E., Martin, R. W., O'Donnell, K. P. Materials Research Society	10 国際会議録 Photoluminescence of Eu-doped GaN K.P. O'Donnell Materials Research Society
5 国際会議録 Light emission from rare-earth-implanted GaN expected for full-color display Yoshida, A., Nakanishi, Y., Wakahara, A. SPIE - The International Society of Optical Engineering	11 国際会議録 Strain and Compositional Analysis of InGaN/GaN Layers Pereira, Sergio, Correia, Maria. R., Pereira, Estela, Trager-Cowan, C., Sweeney, F., Edwards, P. R., O'Donnell, K.P., … Materials Research Society
6 国際会議録 Extended X-ray Absorption Fine Structure Studies of GaN Epilayers Doped In Shin With Er and Eu During Molecular Beam Epitaxy Katchkanov, V., Mosselmans, J.F.W., Dalmasso, S., O'Donnell, K.P., Martin, R.W., Briot, O., Rousseau, N., Halambalakis, … Materials Research Society	12 国際会議録 Damage Formation in GaN Under Medium Energy Range Implantation of Rare Earth Ions: a Combined TEM, XRD and RBS/C Investigation B. Lacroix, S. Leclerc, P. Ruterana, A. Declémy, S.M.C. Miranda, K. Lorenz, E. Alves Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12