A Robust Process for Ion Implant Annealing of SiC in a Low-Pressure Silane Ambient

A Robust Process for Ion Implant Annealing of SiC in a Low-Pressure Silane Ambient

著者名:

Rao, S.

掲載資料名:

Silicon carbide 2004--materials, processing and devices : symposium held April 14-15, 2004, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

815

発行年:

2004

開始ページ:

229

終了ページ:

234

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558997653 [1558997652]

言語:

英語

請求記号:

M23500/815

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014457
シリーズID:	PA00000011
会議名:	Symposium on Silicon carbide
回次:	2004
会議開催地:	San Francisco, CA, USA
会議開催年:	2004.04.14-2004.04.15

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2 国際会議録 J-V Characteristics of Al+ Ion Implanted p+/n 4H-SiC Diodes Annealed in Silane Ambient at 1600℃ Bergamini, F., Rao, S. P., Saddow, S. E., Nipoti, R. Trans Tech Publications	8 国際会議録 Post-Implantation Annealing of SiC: Relevance of the Heating Rate R. Nipoti Trans Tech Publications
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