4H-SiC MIS Structures Using Oxidized Ta2Si as High-k Dielectric

4H-SiC MIS Structures Using Oxidized Ta2Si as High-k Dielectric

著者名:

Perez-Tomas, A.

掲載資料名:

Silicon carbide 2004--materials, processing and devices : symposium held April 14-15, 2004, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

815

発行年:

2004

開始ページ:

211

終了ページ:

216

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558997653 [1558997652]

言語:

英語

請求記号:

M23500/815

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014457
シリーズID:	PA00000011
会議名:	Symposium on Silicon carbide
回次:	2004
会議開催地:	San Francisco, CA, USA
会議開催年:	2004.04.14-2004.04.15

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