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Deep Level Defects in He-Implanted n-6H-SiC Studied by Deep Level Transient Spectroscopy

著者名:
Chen, X.D.
Ling, C.C.
Fung, S.
Beling, C.D.
Wu, H.S.
Brauer, G.
Anwand, W.
Skorupa, W.
さらに 3 件
掲載資料名:
Silicon carbide 2004--materials, processing and devices : symposium held April 14-15, 2004, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
815
発行年:
2004
開始ページ:
163
終了ページ:
168
総ページ数:
6
出版情報:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558997653 [1558997652]
言語:
英語
請求記号:
M23500/815
資料種別:
国際会議録

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