Status of 4H-SiC Substrate and Epitaxial Materials for Commercial Power Applications | 東京工業大学附属図書館文献データベース

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Status of 4H-SiC Substrate and Epitaxial Materials for Commercial Power Applications

著者名:

Sumakeris, J.J.

Hobgood, H.McD.

Carter Jr., C.H.

さらに 6 件

掲載資料名:

Silicon carbide 2004--materials, processing and devices : symposium held April 14-15, 2004, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

815

発行年:

2004

開始ページ:

3

終了ページ:

14

総ページ数:

12

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558997653 [1558997652]

言語:

英語

請求記号:

M23500/815

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014457
シリーズID:	PA00000011
会議名:	Symposium on Silicon carbide
回次:	2004
会議開催地:	San Francisco, CA, USA
会議開催年:	2004.04.14-2004.04.15

類似資料:

1 国際会議録 Large Diameter 4H-SiC Substrates for Commercial Power Applications Powell, A.R., Leonard, R.T., Brady, M.F., Muller, St.G., Tsvetkov, V.F., Trussell, R., Sumakeris, J.J., Hobgood, H.McD., … Trans Tech Publications	7 国際会議録 Large Diameter, Low Defect Silicon Carbide Boule Growth Carter, C.H., Jr., Glass, R.C., Brady, M.F., Malta, D., Henshall, D., Mueller, S., Tsvetkov, V.F., Hobgood, D., Powell, … Trans Tech Publications
2 国際会議録 Silicon Carbide Crystal and Substrate Technology: A Survey of Recent Advances Hobgood, H.McD., Brady, M.F., Calus, M.R., Jenny, J.R., Leonard, R.T., Malta, D.P., Muller, S.G., Powell, A.R., … Trans Tech Publications	8 国際会議録 SiC Warm-Wall Planetary VP E Growth on Multiple 100-mm Diameter Wafers Burk, A.A., O'Loughlin, M.J., Paisley, M.J., Powell, A.R., Brady, M.F, Leonard, R.T., McClure, D.A. Trans Tech Publications
3 国際会議録 Sublimation-Grown Semi-Insulating SiC for High Frequency Devices Muller, St.G., Brady, M.F., Brixius, W.H., Glass, R.C., Hobgood, H.M., Jenny, J.R., Leonard, R.T., Malta, D.P., Powell, … Trans Tech Publications	9 国際会議録 Approaches to Stabilizing the Forward Voltage of Bipolar SiC Devices Sumakeris, J.J., Das, M., Hobgood, H.McD., Mueller, S.G., Paisley, M.J., Ha, S., Skowronski, M., Palmour, J.W., Carter, … Trans Tech Publications
4 国際会議録 Development of Large Diameter High-Purity Semi-Insulating 4H-SiC Wafers for Microwave Devices Jenny, J.R., Malta, D.P., Calus, M.R., Mueller, St.G., Powell, A.R., Tsvetkov, V.F., Hobgood, H.McD., Glass, R.C., … Trans Tech Publications	10 国際会議録 Status of Large Diameter SiC Crystal Growth for Electronic and Optical Applications Hobgood, D., Brady, M., Brixius, W., Fechko, G., Glass, R., Henshall, D., Jenny, J., Leonard, R., Malta, D., Muller, St. … Trans Tech Publications
5 国際会議録 High Quality SiC Substrates for Semiconductor Devices: From Research to Industrial Production Muller, St.G., Brady, M.F., Brixius, W.H., Fechko, G., Glass, R.C., Henshall, D., Hobgood, H.M., Jenny, J.R., Leonard, … Trans Tech Publications	11 国際会議録 Bulk Growth of Large Area SiC Crystals A.R. Powell, J.J. Sumakeris, Y. Khlebnikov, M.J. Paisley, R.T. Leonard Trans Tech Publications
6 国際会議録 High Quality SiC Substrates for Semiconductor Devices: From Research to Industrial Production Muller, St.G., Brady, M.F., Brixius, W.H., Fechko, G., Glass, R.C., Henshall, D., Hobgood, H.M., Jenny, J.R., Leonard, … Trans Tech Publications	12 国際会議録 Exploration of Bulk and Epitaxy Defects in 4H-SiC Using Large Scale Optical Characterization R.T. Leonard, M.J. Paisley, S. Bubel, J.J. Sumakeris, A.R. Powell, Y. Khlebnikov, J.C. Seaman, J. Ambati, A.A. Burk, … Trans Tech Publications

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