Statistical Analysis of Electromigration Lifetimes and Void Evolution for Cu Interconnects

Statistical Analysis of Electromigration Lifetimes and Void Evolution for Cu Interconnects

著者名:

Hauschildt, M.

掲載資料名:

Materials, technology and reliability for advanced interconnects and low-k dielectrics - 2004 : symposium held April 13-15, 2004, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

812

発行年:

2004

開始ページ:

379

終了ページ:

384

総ページ数:

6

出版情報:

Warrendale: Materials Research Society

ISSN:

02729172

ISBN:

9781558997622 [1558997628]

言語:

英語

請求記号:

M23500/812

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014454
シリーズID:	PA00000011
会議名:	Symposium on materials, technology and reliability for advanced interconnects and low-k dielectrics
回次:	2004
会議開催地:	San Francisco, CA, USA
会議開催年:	2004.04.13-2004.04.15

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2 国際会議録 Electromigration Failure Modes in CU Metallization* Gall, M., Capasso, C., Thrasher, S., Zhao, L., Muiski, P., Hernandez, R., Herrick, M., Angyal, M., Boeck, B., Kawasaki, … Electrochemical Society	8 国際会議録 Statistical Evaluation of Stressmigration Reliability in Al-Cu Interconnects Jawarani, D., Gall, M., Capasso, C., Muller, J., Hernandez, R., Kawasaki, H. MRS - Materials Research Society
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