Controlling Area-Selective Atomic Layer Deposition of HfO2 Dielectric by Self-Assembled Monolayers

Controlling Area-Selective Atomic Layer Deposition of HfO2 Dielectric by Self-Assembled Monolayers

著者名:

掲載資料名:

Integration of advanced micro- and nanoelectronic devices - critical issues and solutions : symposium held April 13-16, 2004, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

811

発行年:

2004

開始ページ:

57

終了ページ:

62

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558997615 [155899761X]

言語:

英語

請求記号:

M23500/811

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014453
シリーズID:	PA00000011
会議名:	Symposium on integration of advanced micro- and nanoelectronic devices
回次:	2004
会議開催地:	San Francisco, CA, USA
会議開催年:	2004.04.13-2004.04.16

類似資料:

1 国際会議録 Oxidative Removal of Self-Assembled Monolayers for Selective Atomic Layer Deposition W. Lee, C. Chao, X. Jiang, J. Hwang, S. Bent Electrochemical Society	7 国際会議録 (289f) Atomic Layer Deposition of NiAlxOy Catalysts for Electrochemical Oxidation of Water Jonathan G. Baker, Stacey F. Bent, A.J.M. Mackus American Institute of Chemical Engineers
2 国際会議録 (99b) Metal Oxide Electron-Selective Layers for Inverted Perovskite Solar Cells By Atomic Layer Deposition Axel Palmstrom, Kevin Bush, Michael McGehee, Stacey F. Bent American Institute of Chemical Engineers	8 国際会議録 (289f) Atomic Layer Deposition of NiAlxOy Catalysts for Electrochemical Oxidation of Water Jonathan G. Baker, Stacey F. Bent, A.J.M. Mackus American Institute of Chemical Engineers
3 国際会議録 (99b) Metal Oxide Electron-Selective Layers for Inverted Perovskite Solar Cells By Atomic Layer Deposition Axel Palmstrom, Kevin Bush, Michael McGehee, Stacey F. Bent American Institute of Chemical Engineers	9 国際会議録 Selective atomic layer deposition of titanium oxide on silicon and gold with patterned self-assembled monolayers Sung, M. M. Electrochemical Society
4 国際会議録 (99b) Metal Oxide Electron-Selective Layers for Inverted Perovskite Solar Cells By Atomic Layer Deposition Axel Palmstrom, Kevin Bush, Michael McGehee, Stacey F. Bent American Institute of Chemical Engineers	10 国際会議録 (45d) Topographically Selective Deposition of Dielectrics Using Ion Implantation Dara Bobb-Semple, Fatemeh Hashemi, Yin Fan, Tobin Kaufman-Osborn, Stacey F. Bent American Institute of Chemical Engineers
5 国際会議録 204a. Molecular Layer Deposition of Nanoscale Organic Films Paul W. Loscutoff, Stacey F. Bent American Institute of Chemical Engineers	11 国際会議録 (39e) Atomic Layer Deposition of Nanoscale Materials for Energy Conversion Marja N. Mullings, Jonathan R. Bakke, Carl Hägglund, Stacey F. Bent American Institute of Chemical Engineers
6 国際会議録 (763b) Understanding Active Sites in Ethanol Synthesis on PtCo Catalysts Prepared Using Atomic Layer Deposition Joseph Singh, Stacey F. Bent, Nuoya Yang American Institute of Chemical Engineers	12 国際会議録 (39e) Atomic Layer Deposition of Nanoscale Materials for Energy Conversion Marja N. Mullings, Jonathan R. Bakke, Carl Hägglund, Stacey F. Bent American Institute of Chemical Engineers

1

2

3

4

5

6

7

8

9

10

11

12