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Atomistic Modeling and Simulation of Impurity Atmosphere in Silicon and Edge Dislocation Locking Effects

著者名:
Karoui, A.  
掲載資料名:
Silicon front-end junction formation : physics and technology : symposium held April 13-15, 2004, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
810
発行年:
2004
開始ページ:
387
終了ページ:
394
総ページ数:
8
出版情報:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558997608 [1558997601]
言語:
英語
請求記号:
M23500/810
資料種別:
国際会議録

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