Blank Cover Image

Effect of Ge-Rich Si1-zGez Segregation on the Morphological Stability of NiSi1-uGeu Film Formed on Strained (001) Si0.8Ge0.2 Epilayer

著者名:
Yao, H.B.
Chi, D.Z.
Tripathy, S.
Chow, S.Y.
Wang, W.D.
Chua, S.J.
Sun, H.P.
Pan, X.Q.
さらに 3 件
掲載資料名:
Silicon front-end junction formation : physics and technology : symposium held April 13-15, 2004, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
810
発行年:
2004
開始ページ:
165
終了ページ:
170
総ページ数:
6
出版情報:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558997608 [1558997601]
言語:
英語
請求記号:
M23500/810
資料種別:
国際会議録

類似資料:

1 国際会議録 Suppression Of Nisi-To-Nisi_2 Transition Using Very Short-Time Rta Silicidation

Ma, D., Chi, D.Z., Wang, W.D., Wong, A.S.W., Chua, S.J.

Materials Research Society
7 国際会議録 ORIENTATION DEPENDENCE OF THE STABILITY OF STRAINED Sn EPILAYERS GROWN ON Cd0.8Zn0.2Te SUBSTRATES

Niles, David W, Hochst, Hartmut

Materials Research Society
2 国際会議録 Micro-Raman Spectroscopic Investigation of NiSi Films Formed on BF2+-,B+-and Non=Implanted (100) Si Substrates

Donthu, S.K., Chi, D.Z., Wong, A.S.W., Chua, S.J., Tripathy, S.

Materials Research Society
8 国際会議録 Interplay Of Defects, Microstructures And Surface Stoichiometry During Plasma Processing Of GaN

Ramam, A., Tripathy, S., Chua, S.J.

Materials Research Society
3 国際会議録 Formation and Morphology Evolution of Nickel Germanides on Ge (100) Under Rapid Thermal Annealing

Lee, K.Y., Liew, S.L., Chua, S.J., Chi, D.Z., Sun, H.P., Pan, X.Q.

Materials Research Society
9 国際会議録 Comparative Study Of Trap Levels Observed In Undoped And Si-Doped GaN

Soh, C.B., Chi, D.Z., Lim, H.F., Chua, S.J.

Materials Research Society
4 国際会議録 Identification of deep levels in π-GaN epilayers

Soh, C.B., Chi, D.Z., Lim, H.F., Chua, S.J.

SPIE-The International Society for Optical Engineering
10 国際会議録 Schottky Barrier Height Engineering in NiGe/n-Ge(001) Contacts by Germanidation Induced Dopant Segregation

S. L. Liew, C. T. Chua, D. H. L. Seng, D. Z. Chi

Materials Research Society
5 国際会議録 Study of Ni(Pt) Germanosilicides Formation on Fully-Strained Si0.9Ge0.1 and Si0.899Ge0.1C0.001 by Raman Spectroscopy

Chaw, J.Y.Y., Pey, K.L., Lee, P.S., Chi, D.Z., Liu, J.P.

Materials Research Society
11 国際会議録 NiSi Formation in the Ni(Ti)/SiO2/Si System

Lee, R. T. P., Chi, D. Z., Chua, S. J.

Materials Research Society
6 国際会議録 Theoretical comparison of 0.78% tensile strained InGaAs/InAlGaAs and InGaAs/InGaAsP quantum well lasers emitting at 1.55 ｦﾌm

Khoo,H.K., Chua,S.J.

SPIE - The International Society for Optical Engineering
12 国際会議録 Effect of V/III ratio on extended defects in InGaAIP measured by isothermal DLTS

Lim, H.F., Chua, S.J., Dong, J.R., Chi, D.Z., Soh, C.B.

SPIE-The International Society for Optical Engineering
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12