Applications of Ni-Based Silicides to 45 nm CMOS and Beyond | 東京工業大学附属図書館文献データベース

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Applications of Ni-Based Silicides to 45 nm CMOS and Beyond

著者名:

Kittl, Jorge A.

Chamirian, Oxana

Pawlak, Malgorzata A.

Potter, Muriel De

Kottantharayil, Anil

Pourtois, Geoffrey

Lindsay, Richard

さらに 6 件

掲載資料名:

Silicon front-end junction formation : physics and technology : symposium held April 13-15, 2004, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

810

発行年:

2004

開始ページ:

31

終了ページ:

42

総ページ数:

12

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558997608 [1558997601]

言語:

英語

請求記号:

M23500/810

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014452
シリーズID:	PA00000011
会議名:	Symposium on silicon front-end junction formation
回次:	2004
会議開催地:	San Francisco, CA, USA
会議開催年:	2004.04.13-2004.04.15

類似資料:

1 国際会議録 Silicides for 65 nm CMOS and Beyond Kittl, Jorge A., Lauwers, Anne, Chamirian, Oxana, Dal, Mark Van, Akheyar, Amal, Richard, Olivier, Lisoni, Judit G., … Materials Research Society	7 国際会議録 23 Ni-based silicides: material issues for advanced CMOS applications Kittl, J.A., Lauwers, A., Chamirian, O., Van Dal, M, Akheyar, A., Richard, O., Lisoni, J.G., De Potter, M, Lindsay, R., … Electrochemical Society
2 国際会議録 Effects of Alloying on Properties of NiSi for CMOS Applications Dal, Mark van, Akheyar, Amal, Kittl, Jorge A., Chamirian, Oxana, Potter, Muriel De, Demeurisse, Caroline, Lauwers, Anne, … Materials Research Society	8 国際会議録 26 Co-silicide, Co(Ni)-silicide and Ni-silicide to source¥drain contact resistance Akheyar, A., Lauwers, A., Kitti, J.A., De Potter, M, Chamirian, O., Jonckheere, R., Leunissen, P., van Dal, M, Lindsay, … Electrochemical Society
3 国際会議録 Ni Silicide Morphology On Small Features Chamirian, Oxana, Lauwers, Anne, Kittl, Jorge A., Dal, Mark Van, Potter, Muriel De, Vrancken, Christa, Lindsay, Richard, … Materials Research Society	9 国際会議録 22 Silicide scaling: Co, Ni or CoNi? Lauwers, A., Kitti, IA., Akheyar, A., Van Dal, M, Chamirian, O., de Potter, M, Lindsay, R., Muex, K. Electrochemical Society
4 国際会議録 Ni-Silicided Deep Source/Drain Junctions Formed by Solid Phase Epitaxial Regrowth Lauwers, Anne, Lindsay, Richard, Henson, Kirklen, Severi, Simone, Akheyar, Amal, Pawlak, Bartek J., Potter, Muriel de, … Materials Research Society	10 国際会議録 Electrical Performance and Scalability of Ni-Monosilicide Towards sub 0.13 μm Technologies Lauwers, Anne, Potter, Muriel de, Lindsay, Richard, Steegen, An, Roelandts, Nico, Loosen, Fred, Vrancken, Christa, Maex, … Materials Research Society
5 国際会議録 Linewidth Dependence Of The Reverse Bias Junction Leakage For Co-Silicided Source/Drain Junctions Lauwers, Anne, Potter, Muriel de, Lindsay, Richard, Chamirian, Oxana, Demeurisse, Caroline, Vrancken, Christa, Maex, … Materials Research Society	11 国際会議録 27 Materials Issues of Ni Fully Silicided (FUSI) Gates for CMOS Applications Kittl, J. A., Lauwers, A., Pawlak, M. A., Demeurisse, C., Anil, K. G., Veloso, A., van Dal, M. J. H., Schram, T., Brijs, … Electrochemical Society
6 国際会議録 Analysis Of Silicide/Diffusion Contact Resistance Making Use Of Transmission Line Structures Akheyar, Amal, Lauwers, Anne, Lindsay, Richard, Potter, Muriel de, Tempel, Georg, Maex, Karen Materials Research Society	12 国際会議録 RTP Requirements for CMOS Integration of Dual Work Function Phase Controlled Ni-FUSI (Fully Silicided) Gates with Simultaneous Silicidation of nMOS (NiSi) and … A. Lauwers, J. Kittl, K. Maex Trans Tech Publications

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