The Role of Preamorphization and Activation for Ultra Shallow Junction Formation on Strained Si Layers Grown on SiGe Buffer | 東京工業大学附属図書館文献データベース

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The Role of Preamorphization and Activation for Ultra Shallow Junction Formation on Strained Si Layers Grown on SiGe Buffer

著者名:

Vandervorst, W.

さらに 6 件

掲載資料名:

High-mobility group-IV materials and devices : symposium held April 13-15, 2004, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

809

発行年:

2004

開始ページ:

281

終了ページ:

286

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558997592 [1558997598]

言語:

英語

請求記号:

M23500/809

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014451
シリーズID:	PA00000011
会議名:	Symposium on high-mobility group
回次:	4th
会議開催地:	San Francisco, CA, USA
会議開催年:	2004.04.13-2004.04.15

類似資料:

1 国際会議録 The Role of Preamorphization and Activation for Ultra-Shallow Junction Formation on Strained Si Layers Grown on SiGe Buffer Pawlak, B.J., Vandervorst, W., Lindsay, R., Wolf, I.De, Roozeboom, F., Delhougne, R., Benedetti, A., Loo, R., Caymax, … Materials Research Society	7 国際会議録 Enhanced Antimony Activation for Ultra-Shallow Junctions in Strained Silicon N.S. Bennett, A.J. Smith, C.S. Beer, L. O'Reilly, B. Colombeau, G.D. Dilliway, R. Harper, P.J. McNally, R. Gwilliam, … Materials Research Society
2 国際会議録 A Thermal Migration of Ge During Junction Formation in s-Si Layers Grown on Thin SiGe-Buffer Layers Vandervorst, W., Pawlak, B.J., Janssens, T., Brijs, B., Delhougne, R., Caymax, M., Loo, R. Materials Research Society	8 国際会議録 (Selective) Epitaxial Growth of Strained Si to Fabricate Low Cost and High Performance CMOS Devices Loo, R., Delhougne, R., Meunier-Beillard, P., Caymax, M., Verheyen, P., Eneman, G., Wolf, I.De, Janssens, T., Benedetti, … Materials Research Society
3 国際会議録 A Thermal Migration of Ge During Junction Formation in s-Si Layers Grown on Thin SiGe-Buffer Layers Vandervorst, W., Pawlak, B.J., Janssens, T., Brijs, B., Delhougne, R., Caymax, M., Loo, R. Materials Research Society	9 国際会議録 P+/N Junction Formation in Thin Strain Relaxed Buffer Strained Silicon Substrates: The Effect of the Junction Anneal Eneman, G., Simoen, E., Delhougne, R., Verheyen, P., Simons, V., Loo, R., Caymax, M., De Meyer, K., Vandervorst, W., … Electrochemical Society
4 国際会議録 Current Understanding and Modeling of B Diffusion and Activation Anomalies in Preamorphized Ultra-Shallow Junctions Colombeau, B., Smith, A.J., Cowern, N.E.B., Pawlak, B.J., Cristiano, F., Duffy, R., Claverie, A., Ortiz, C.J., Pichler, … Materials Research Society	10 国際会議録 Doping and Mobility Profiles in Defect-Engineered Ultra-Shallow Junctions : Bulk and SOI Smith, A.J., Colombeau, B., Gwilliam, R., Collart, E., Cowern, N.E.B., Sealy, B.J. Materials Research Society
5 国際会議録 Analysis of Junctions Formed in Strained Si/SiGe Substrates Eneman, G., Simoen, E., Lauwers, A., Lindsay, R., Verheyen, P., Delhougne, R., Loo, R., Caymax, M., Meunier-Beillard, … Materials Research Society	11 国際会議録 Laser Annealing for Ultra-Shallow Junction Formation in Advanced CMOS Surdeanu, R., Ponomarev, Y.V., Cerutti, R., Pawlak, B.J., Nanver, L.K., Hoflijk, I., Stolk, P.A., Dachs, C.J.J., … Electrochemical Society
6 国際会議録 N+/P and P+/N Junctions in Strained Si on Thin Strain Relaxed SiGe Buffers: the Effect of Defect Density and Layer Structure Eneman, G., Simoen, E., Delhougne, R., Verheyen, P., Ries, M., Loo, R., Caymax, M., Vandervorst, W., De Meyer, K. Materials Research Society	12 国際会議録 Physics-Based Diffusion Simulations for Preamorphized Ultra-Shallow Junctions Cowern, N. E. B., Colombeau, B., Lampin, E., Cristiano, F., Claverie, A., Lamrani, Y., Duffy, R., Venezia, V., Heringa, … Materials Research Society

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