A Thermal Migration of Ge During Junction Formation in s-Si Layers Grown on Thin SiGe-Buffer Layers

A Thermal Migration of Ge During Junction Formation in s-Si Layers Grown on Thin SiGe-Buffer Layers

著者名:

Vandervorst, W.

掲載資料名:

High-mobility group-IV materials and devices : symposium held April 13-15, 2004, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

809

発行年:

2004

開始ページ:

273

終了ページ:

280

総ページ数:

8

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558997592 [1558997598]

言語:

英語

請求記号:

M23500/809

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014451
シリーズID:	PA00000011
会議名:	Symposium on high-mobility group
回次:	4th
会議開催地:	San Francisco, CA, USA
会議開催年:	2004.04.13-2004.04.15

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2 国際会議録 The Role of Preamorphization and Activation for Ultra Shallow Junction Formation on Strained Si Layers Grown on SiGe Buffer Pawlak, B.J., Vandervorst, W., Lindsay, R., Wolf, I.De, Roozeboom, F., Delhougne, R., Benedetti, A., Loo, R., Caymax, … Materials Research Society	8 国際会議録 Comparative Growth Kinetics of SiGe in a Commercial Reduced Pressure Chemical Vapor Deposition EPI Reactor and Anomalies During Growth of Thin Si Layers on SiGe Caymax, Matty, Loo, Roger, Brijs, Bert, Vandervorst, Wilfried, Howard, David J., Kimura, Kenji, Nakajima, Kaoru MRS - Materials Research Society
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4 国際会議録 N+/P and P+/N Junctions in Strained Si on Thin Strain Relaxed SiGe Buffers: the Effect of Defect Density and Layer Structure Eneman, G., Simoen, E., Delhougne, R., Verheyen, P., Ries, M., Loo, R., Caymax, M., Vandervorst, W., De Meyer, K. Materials Research Society	10 国際会議録 In-Line and Non-Destructive Analysis of Epitaxial Si1-x-yGe xCy by Spectroscopic Ellipsometry and Comparison with Other Established Techniques Loo, R., Meunier-Beillard, P., Delhougne, R., Koumoto, T., Geenen, L., Brijs, B., Vandervorst, W. SPIE-The International Society for Optical Engineering
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