Blank Cover Image

Arsenic Diffusion in Si and Si0.9Ge0.1 Alloys : Effect of Defect Injection

著者名:
掲載資料名:
High-mobility group-IV materials and devices : symposium held April 13-15, 2004, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
809
発行年:
2004
開始ページ:
261
終了ページ:
266
総ページ数:
6
出版情報:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558997592 [1558997598]
言語:
英語
請求記号:
M23500/809
資料種別:
国際会議録

類似資料:

1 国際会議録 Arsenic Diffusion in Si and Si0.9Ge0.1 Alloys : Effect of Defect Injection

Uppal, Suresh, Bonar, J.M., Zhang, Jing, Willoughby, A.F.W.

Materials Research Society
7 国際会議録 INVITED: DIFFUSION MECHANISMS IN SiGe ALLOYS

Willoughby, A.F.W.

Electrochemical Society
2 国際会議録 Diffusion of Ion-Implanted Boron and Silicon in Germanium

Uppal, Suresh, Willoughby, A.F.W., Bonar, J.M., Cowern, N.E.B., Morris, R.J.H., Dowsett, M.G.

Materials Research Society
8 国際会議録 Diffusion of Boron in Germanium and Si1-xGex (x＞50%) Alloys

Uppal, Suresh, Willoughby, A. F. W., Bonara, J. M., Cowernb, N. E. B., Morrisc, R. J. H., Bollanid, M.

Materials Research Society
3 国際会議録 Effect of Point Defect Injection on B Diffusion in C Containing Si and SiGe

Karunaratne, Mudith S.A., Bonar, Janet M., Zhang, Jing, Willoughby, Arthur F.W.

Materials Research Society
9 国際会議録 Effect of Carbon on Diffusion of Boron in SiGe Between 940-1050℃

Karunaratne, Mudith S.A., Bonar, Janet M., Zhang, Jing, Willoughby, Arthur F.W.

Materials Research Society
4 国際会議録 (14.2) 10:25 - 10:45 AM - Diffusion in SiGe: Defect Injection Studies in Sb, As and B

Bonar, J. M., Karunaratne, M. S. A., Uppal, S., Ashburn, P., Willoughby, A. F. W. (Univ. of Southampton)

Electrochemical Society
10 国際会議録 Diffusion Mechanisms in SiGe Alloys

Willoughby, A. F. W., Bonar, J. M., Paine, A. D. N.

MRS - Materials Research Society
5 国際会議録 (4.4) 7:34 - 7:37 PM - Diffusion of Ion-Implanted Boron in High Ge Content SiGe Alloys

Uppal, S., Willoughby, A. F. W., Bonar, J. M.(Univ. of Southampton)

Electrochemical Society
11 国際会議録 Antimony and Boron Diffusion in Silicon and Silicon Germanium under the Influence of Point Defects Injection by Rapid Thermal Anneal

Dan, Aihua, Willoughby, Arthur F.W., Bonar, Janet M., McGregor, Barry M., Dowsett, Mark G., Ormsby, Terry J.

Materials Research Society
6 国際会議録 Dopant Diffusion in Strained and Relaxed Si1-xGex

Paine,A.D.N., Morooka,M., Willoughby,A.F.W., Bonar,J.M., Phillips,P., Dowsett,M.G., Cooke,G.

Trans Tech Publications
12 国際会議録 Characterization of morphology and defects in silicon-germanium virtual substrates

Dilliway, G. D. M., Willoughby, A. F. W., Bonar, J. M.

MRS-Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12