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Analysis of Junctions Formed in Strained Si/SiGe Substrates

著者名:
Eneman, G.
Simoen, E.
Lauwers, A.
Lindsay, R.
Verheyen, P.
Delhougne, R.
Loo, R.
Caymax, M.
Meunier-Beillard, P.
Demuynck, S.
Meyer, K.De
Vandervorst, W.
さらに 7 件
掲載資料名:
High-mobility group-IV materials and devices : symposium held April 13-15, 2004, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
809
発行年:
2004
開始ページ:
187
終了ページ:
192
総ページ数:
6
出版情報:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558997592 [1558997598]
言語:
英語
請求記号:
M23500/809
資料種別:
国際会議録

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