Blank Cover Image

Relaxation of Strained SiGe on Insulator by Direct Wafer Bonding

著者名:
掲載資料名:
High-mobility group-IV materials and devices : symposium held April 13-15, 2004, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
809
発行年:
2004
開始ページ:
57
終了ページ:
64
総ページ数:
8
出版情報:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558997592 [1558997598]
言語:
英語
請求記号:
M23500/809
資料種別:
国際会議録

類似資料:

1 国際会議録 Stability Improvement of Nickel Silicide With Co Interlayer on Si, Polysilicon and SiGe

Maa, Jer-shen, Tweet, Douglas J., Ono, Yoshi, Stecker, Lisa, Hsu, Sheng Teng

Materials Research Society
7 国際会議録 Relaxation of SiGe Films for the Fabrication of Strained Si Devices

Maa, J. S., Tweet, D. J., Lee, J. J., Hsu, S. T., Fujii, K., Naka, T., Ueda, T., Baba, T., Awaya, N., Sakiyama, K.

Materials Research Society
2 国際会議録 Fabrication of Strained Silicon on Insulator (SSOI) by Direct Wafer Bonding Using Thin Relaxed SiGe Film as Virtual Substrate

Lee, J.J., Maa, J.S., Tweet, D.J.., Hsu, S.T.

Materials Research Society
8 国際会議録 (13.3) 8:50 - 9:10 AM - Fabrication of Thin Relaxed SiGe Films for Strained Si Applications

Tweet, D. J., Maa, J. S., Lee, J. J., Hsu, S. T. (Sharp Labs. - America)

Electrochemical Society
3 国際会議録 X-ray Techniques for Silicides

Tweet, Douglas J., Maa, Jer-shen, Hsu, Sheng Teng

Materials Research Society
9 国際会議録 Thermal stability of Ir/TaN electrode/Barrier on thin gate oxide for MFMOS one transistor memory application

Zhang, Fengyan, Hsu, Sheng Teng, Li, Tingkai, Ono, Yoshi, Maa, Jer-shen, Ying, Hong, Stecker, Lisa

MRS-Materials Research Society
4 国際会議録 Reaction of Amorphous Silicon with Cobalt and Nickel Silicides before Disilicide Formation

Maa, Jer-shen, Hsu, Sheng Teng

MRS - Materials Research Society
10 国際会議録 Highly Stable Ir-Ta-O Electrode for Ferroelectric Material Deposition

Zhang, Fengyan, Hsu, Sheng Teng, Maa, Jer-Shen, Ono, Yoshi, Hong, Ying, Zhuang, Weiwei, Ohnishi, Shigeo, Zhen, Wendong, …

Materials Research Society
5 国際会議録 Effect of Graded AlxGa₁₋xN Interlayer Buffer on the Strain of GaN Grown on Si (111) Using MOCVD Method

KungLiang Lin, Edward-Yi Chang, Tingkai Li, Wei-Ching Huang, Yu-Lin Hsiao, Douglas Tweet, Jer-shen Maa, Sheng-Teng Hsu

Materials Research Society
11 国際会議録 ANISOTROPIC DRY ETCHING OF ALUMINUM FILMS DEPOSITED ON TOPOGRAPHIC STEPS

Maa, Jer-shen

Materials Research Society
6 国際会議録 Relaxation of SiGe Films for the Fabrication of Strained Si Devices

Maa, J. S., Tweet, D. J., Lee, J. J., Hsu, S. T., Fujii, K., Naka, T., Ueda, T., Baba, T., Awaya, N., Sakiyama, K.

Materials Research Society
12 国際会議録 Direct Observations of Relaxation of Si/SiGe/Si on Insulator

Tongda Ma, Hailing Tu

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12