Influence of He Implantation Conditions on Strain Relaxation and Threading Dislocation Density in Si0.8Ge0-2 Virtual Substrates
- 著者名:
Cai, J. Mooney, P.M. Christiansen, S.H. Chen, H. Chu, J.O. Ott, J.A. - 掲載資料名:
- High-mobility group-IV materials and devices : symposium held April 13-15, 2004, San Francisco, California, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 809
- 発行年:
- 2004
- 開始ページ:
- 51
- 終了ページ:
- 56
- 総ページ数:
- 6
- 出版情報:
- Warrendale, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558997592 [1558997598]
- 言語:
- 英語
- 請求記号:
- M23500/809
- 資料種別:
- 国際会議録
類似資料:
1
国際会議録
Strain Relaxation Mechanisms in He+-Implanted and Annealed Si1-xGex Layers on Si(001) Substrates
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