The Use of Ion Implantation and Annealing for the Fabrication of Strained Silicon on Thin SiGe Virtual Substrates

The Use of Ion Implantation and Annealing for the Fabrication of Strained Silicon on Thin SiGe Virtual Substrates

著者名:

Buca, D.

掲載資料名:

High-mobility group-IV materials and devices : symposium held April 13-15, 2004, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

809

発行年:

2004

開始ページ:

15

終了ページ:

26

総ページ数:

12

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558997592 [1558997598]

言語:

英語

請求記号:

M23500/809

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014451
シリーズID:	PA00000011
会議名:	Symposium on high-mobility group
回次:	4th
会議開催地:	San Francisco, CA, USA
会議開催年:	2004.04.13-2004.04.15

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