Influence of Catalyzer Area and Design on the Growth of Intrinsic Hot-Wire CVD Thin-Film Silicon for Photovoltaic Applications
- 著者名:
- 掲載資料名:
- Amorphous and nanocrystalline silicon science and technology - 2004 : symposium held April 13-16, 2004, San Francisco, California, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 808
- 発行年:
- 2004
- 開始ページ:
- 401
- 終了ページ:
- 406
- 総ページ数:
- 6
- 出版情報:
- Warrendale: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558997585 [155899758X]
- 言語:
- 英語
- 請求記号:
- M23500/808
- 資料種別:
- 国際会議録
類似資料:
1
国際会議録
Growth of Hydrogenated Microcrystalline Silicon (μc-Si:H) Films by HWCVD Using a Graphite Catalyzer
Materials Research Society |
Materials Research Society |
Materials Research Society |
MRS - Materials Research Society |
3
国際会議録
Deposition of Polysilicon Films by Hot-Wire CVD at Low Temperatures for Photovoltaic Applications
MRS - Materials Research Society |
MRS - Materials Research Society |
Materials Research Society |
Materials Research Society |
MRS - Materials Research Society |
11
国際会議録
THE INFLUENCE OF SILICON OVERLAYERS ON THE ELECTRICAL CONDUCTIVITY OF VERY THIN CHROMIUM FILMS
MRS - Materials Research Society |
Materials Research Society |
12
国際会議録
In Situ Ellipsometric Studies of the Growth of a-Si:H Films Prepared by the Hot Wire Deposition
MRS - Materials Research Society |