The Oxide/Nitride Interface: A Study for Gate Dielectrics and Field Passivation | 東京工業大学附属図書館文献データベース

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The Oxide/Nitride Interface: A Study for Gate Dielectrics and Field Passivation

著者名:

Abernathy, C. R.

さらに 6 件

掲載資料名:

Fundamentals of novel oxide/semiconductor interfaces : symposium held December 1-4, 2003, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

786

発行年:

2004

開始ページ:

385

終了ページ:

396

総ページ数:

12

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558997240 [1558997245]

言語:

英語

請求記号:

M23500/786

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014443
シリーズID:	PA00000011
会議名:	Symposium on fundamentals of novel oxide
回次:	2003
会議開催地:	Boston, MA, USA
会議開催年:	2003.12.01-2003.12.04

類似資料:

1 国際会議録 Growth of Magnesuim Oxide and Scandium Oxide on GaN for Use as Gate and Field Passivation Dielectrics Gila, B.P., Luo, B., Kim, J., Mehandru, R., LaRoche, J.R., Onstine, A.H., Abernathy, C.R., Ren, F., Pearton, S.J. Electrochemical Society	7 国際会議録 Proton Irradiation Effects on Scandium Oxide/Gallium Nitride MOS Diodes Allums, K., Luo, B., Mehandru, R., Gila, B.P., Dwivedi, R., Fogarty, T.N., Wilkins, R., Abernathy, C.R., Ren, F., … Materials Research Society
2 国際会議録 Progress in Novel Oxides for Gate Dielectrics And Surface Passivation of GaN/AlGaN Heterostructure Field Effect Transistors Abernathy, C.R., Gila, B.P., Onstine, A.H., Pearton, S.J., Kim, J., Luo, B., Mehandru, R., Ran, F., Gillespie, J.K., … Electrochemical Society	8 国際会議録 Electrical Characterization of GaN Metal Oxide Semiconductor Diodes Using MgO as the Gate Oxide Kim, Jihyun, Gila, B.P., Mehandru, R., Johnson, J.W., Shin, J.H., Lee, K.P., Luo, B., Onstine, A, Abernathy, C.R., … Materials Research Society
3 国際会議録 Electrical Characterization of GaN Metal Oxide Semiconductor Diode Using Sc2O3 as the Gate Oxide Mehandru, R., Gila, B.P., Kim, J., Johnson, J.W., Lee, K.P., Luo, B., Onstine, A.H., Abernathy, C.R., Pearton, S.J., … Materials Research Society	9 国際会議録 Improved Oxide Passivation of AlGaN/GaN High Electron Mobility Transistors T. Anderson, B. P. Gila, M. Hiad, A. H. Onstine, R. Frazier, G. T. Thaler, A. Herrero, E. Lambers, C. R. Abernathy, S. … Electrochemical Society
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