Passivation of Oxide Layers on 4H-SiC Using Sequential Anneals in Nitric Oxide and Hydrogen | 東京工業大学附属図書館文献データベース

Blank Cover Image

Passivation of Oxide Layers on 4H-SiC Using Sequential Anneals in Nitric Oxide and Hydrogen

著者名:

Williams, J. R.

Isaacs-Smith, T.

Franceschetti, A.

Pantelides, S. T.

さらに 7 件

掲載資料名:

Fundamentals of novel oxide/semiconductor interfaces : symposium held December 1-4, 2003, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

786

発行年:

2004

開始ページ:

371

終了ページ:

378

総ページ数:

8

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558997240 [1558997245]

言語:

英語

請求記号:

M23500/786

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014443
シリーズID:	PA00000011
会議名:	Symposium on fundamentals of novel oxide
回次:	2003
会議開催地:	Boston, MA, USA
会議開催年:	2003.12.01-2003.12.04

類似資料:

1 国際会議録 Nitrogen and Hydrogen Induced Trap Passivation at the SiO2/4H-SiC Interface Dhar, S., Wang, S.R., Ahyi, A.C., Isaacs-Smith, T., Pantelides, S.T., Williams, J.R., Feldman, L.C. Trans Tech Publications	7 国際会議録 Bonding, Defects, and Defect Dynamics in the SiC-SiO2 System Pantelides, S.T., Buczko, R., Ventra, M. Di, Wang, S., Kim, S.-G., Pennycook, S.J., Duscher, G., Feldman, L.C., … Materials Research Society
2 国際会議録 Passivation of the 4H-SiC/SiO2 Interface with Nitric Oxide Williams, J.R., Chung, G.Y., Tin, C.C., McDonald, K., Farmer, D., Chanana, R.K., Weller, R.A., Pantelides, S.T., … Trans Tech Publications	8 国際会議録 Nitrogen Passivation of the Interface States Near the Conduction Band Edge in 4H-Silicon Carbide Williams, J.R., Chung, G.Y., Tin, C.C., McDonald, K., Farmer, D., Chanana, R.K., Weller, R.A., Pantelides, S.T., … Materials Research Society
3 国際会議録 Passivation of the 4H-SiC/SiO2 Interface with Nitric Oxide Williams, J.R., Chung, G.Y., Tin, C.C., McDonald, K., Farmer, D., Chanana, R.K., Weller, R.A., Pantelides, S.T., … Trans Tech Publications	9 国際会議録 Thin PSG Process for 4H-SiC MOSFET Y.K. Sharma, A.C. Ahyi, T. Isaacs-Smith, A. Modic, Y. Xu Trans Tech Publications
4 国際会議録 Nitrogen Content and Interface Trap Reduction in SiO2/4H-SiC McDonald, K., Weller, R.A., Pantelides, S.T., Feldman, L.C., Chung, G.Y, Tin, C.C., Williams, J.R. Electrochemical Society	10 国際会議録 The Effects Of Post-Oxidation Anneal Conditions On Interface State Density Near The Conduction Band Edge And Inversion Channel Mobility For SiC MOSFETs Chung, Gilyong, Tin, Chin-Che, Williams, John Robert, McDonald, Kyle, DiVentra, M., Pantelides, S.T., Feldman, Len C., … Materials Research Society
5 国際会議録 Electron Trapping in 4H-SiC MOS Capacitors Fabricated by Sodium-Enhanced Oxidation A.F. Basile, A.C. Ahyi, L.C. Feldman, J.R. Williams, P.M. Mooney Trans Tech Publications	11 国際会議録 The Effects of Phosphorus at the SiO₂/4H-SiC Interface Y.K. Sharma, A.C. Ahyi, T. Issacs-Smith, X. Shen, S.T. Pantelides Trans Tech Publications
6 国際会議録 The Limits of Post Oxidation Annealing in NO J. Rozen, X.G. Zhu, A.C. Ahyi, J.R. Williams, L.C. Feldman Trans Tech Publications	12 国際会議録 Si/SiO2 and SiC/SiO2 Interfaces for MOSFETs - Challenges and Advances Pantelides, S.T., Wang, S., Franceschetti, A., Buczko, R., Di Ventra, M., Rashkeev, S.N., Tsetseris, L., Evans, M.H., … Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12