Nitrided Hafnium Silicate Film Formation by Sequential Process Using a Hot Wall Batch System and Its Application to MOS Transistor
- 著者名:
Aoyama, Tomonori Torii, Kazuyoshi Mitsuhashi, Riichirou Maeda, Takeshi Kamiyama, Satoshi Horiuchi, Atsushi Kitajima, Hiroshi Arikado, Tsunetoshi - 掲載資料名:
- Fundamentals of novel oxide/semiconductor interfaces : symposium held December 1-4, 2003, Boston, Massachusetts, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 786
- 発行年:
- 2004
- 開始ページ:
- 273
- 終了ページ:
- 278
- 総ページ数:
- 6
- 出版情報:
- Warrendale, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558997240 [1558997245]
- 言語:
- 英語
- 請求記号:
- M23500/786
- 資料種別:
- 国際会議録
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