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Conductance Transient Comparative Analysis of ECR-PECVD Deposited SiNx, SiO2/SiNx and SiOxNy Dielectric Films on Silicon Substrates

著者名:
Castan, H.
Duenas, S.
Barbolla, J.
Del Prado, A.
San Andres, E.
Martil, I.
Gonzalez-Diaz, G.
さらに 2 件
掲載資料名:
Fundamentals of novel oxide/semiconductor interfaces : symposium held December 1-4, 2003, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
786
発行年:
2004
開始ページ:
83
終了ページ:
88
総ページ数:
6
出版情報:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558997240 [1558997245]
言語:
英語
請求記号:
M23500/786
資料種別:
国際会議録

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