Relaxed SiGe Layers With High Ge Content by Compliant Substrates

Relaxed SiGe Layers With High Ge Content by Compliant Substrates

著者名:

Yin, H.

掲載資料名:

Intergration of heterogeneous thin-film materials and devices : symposium held April 23-24, 2003, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

768

発行年:

2003

開始ページ:

15

終了ページ:

20

総ページ数:

6

出版情報:

Warrendale, PA: Materials Research Society

ISSN:

02729172

ISBN:

9781558997059 [1558997059]

言語:

英語

請求記号:

M23500/768

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014426
シリーズID:	PA00000011
会議名:	Symposium on integration of heterogeneous thin-film materials and devices
回次:	2003
会議開催地:	San Francisco, CA, USA
会議開催年:	2003.04.23-2003.04.24

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5 国際会議録 63 Thermal Stability of a Novel Graded Layer for Relaxed SiGe/Si Heteroepitaxy Wong, L.H., Wong, C.C., Ferraris, C., White, T.J., Liu, J.P., Chan, L., Sohn, O.K., Hsia, L. C. Electrochemical Society	11 国際会議録 Suppression of Boron Transient-Enhanced Diffusion in SiGe HBTs by Carbon Incorporation Lanzerotti, L. D., Sturm, J. C., Stach, E., Hull, R., Buyuklimanli, T., Magee, C. MRS - Materials Research Society
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