Near-Threshold Electromigration of Damascene Copper on TiN Barrier

Near-Threshold Electromigration of Damascene Copper on TiN Barrier

著者名:

掲載資料名:

Materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics-2003 : symposium held April 21-25, 2003, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

766

発行年:

2003

開始ページ:

145

終了ページ:

152

総ページ数:

8

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558997035 [1558997032]

言語:

英語

請求記号:

M23500/766

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014424
シリーズID:	PA00000011
会議名:	Symposium on materials, Technology and Reliability for Advanced Interconnects and Low-k Dielectrics
回次:	2003
会議開催地:	San Francisco, CA, USA
会議開催年:	2003.04.21-2003.04.25

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