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Formation of NiSi-Silicided p+n Shallow Junctions Using Implant Through Silicide and Low Temperature Furnace Annealing

著者名:
掲載資料名:
CMOS front-end materials and process technology : symposium held April 22-24, 2003, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
765
発行年:
2003
開始ページ:
235
終了ページ:
242
総ページ数:
8
出版情報:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558997028 [1558997024]
言語:
英語
請求記号:
M23500/765
資料種別:
国際会議録

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