Physics-Based Diffusion Simulations for Preamorphized Ultra-Shallow Junctions | 東京工業大学附属図書館文献データベース

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Physics-Based Diffusion Simulations for Preamorphized Ultra-Shallow Junctions

著者名:

Cowern, N. E. B.

さらに 6 件

掲載資料名:

CMOS front-end materials and process technology : symposium held April 22-24, 2003, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

765

発行年:

2003

開始ページ:

199

終了ページ:

204

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558997028 [1558997024]

言語:

英語

請求記号:

M23500/765

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014423
シリーズID:	PA00000011
会議名:	Symposium on CMOS front-end materials and process technology
回次:	2003
会議開催地:	San Francisco, CA, USA
会議開催年:	2003.04.22-2003.04.24

類似資料:

1 国際会議録 Current Understanding and Modeling of B Diffusion and Activation Anomalies in Preamorphized Ultra-Shallow Junctions Colombeau, B., Smith, A.J., Cowern, N.E.B., Pawlak, B.J., Cristiano, F., Duffy, R., Claverie, A., Ortiz, C.J., Pichler, … Materials Research Society	7 国際会議録 The Role of Preamorphization and Activation for Ultra Shallow Junction Formation on Strained Si Layers Grown on SiGe Buffer Pawlak, B.J., Vandervorst, W., Lindsay, R., Wolf, I.De, Roozeboom, F., Delhougne, R., Benedetti, A., Loo, R., Caymax, … Materials Research Society
2 国際会議録 10 Relation between thermal evolution of interstitial defects and Transient Enhanced Diffusion in silicon Claverie, A., Cristiano, F., Colombeau, B., Hebras, X., Calvo, P., Cherkoshin, N., Larnrani, Y., Scheid, E., de Mauduit, … Electrochemical Society	8 国際会議録 The Role of Preamorphization and Activation for Ultra-Shallow Junction Formation on Strained Si Layers Grown on SiGe Buffer Pawlak, B.J., Vandervorst, W., Lindsay, R., Wolf, I.De, Roozeboom, F., Delhougne, R., Benedetti, A., Loo, R., Caymax, … Materials Research Society
3 国際会議録 Atomistic Simulations of Extrinsic Defects Evolution and Transient Enhanced Diffusion in Silicon Claverie, A., Colombeau, B., Cristiano, F., Altibelli, A., Bonafos, C. Materials Research Society	9 国際会議録 Enhanced Antimony Activation for Ultra-Shallow Junctions in Strained Silicon N.S. Bennett, A.J. Smith, C.S. Beer, L. O'Reilly, B. Colombeau, G.D. Dilliway, R. Harper, P.J. McNally, R. Gwilliam, … Materials Research Society
4 国際会議録 Modeling and Simulation of the Influence of SOI Structure on Damage Evolution and Ultra-Shallow Junction Formed by Ge Preamorphization Implants and Solid Phase … K.R.C. Mok, B. Colombeau, M. Jaraiz, P. Castrillo, J.E. Rubio, R. Pinacho, M.P. Srinivasan, F. Benistant, I. … Materials Research Society	10 国際会議録 Role of Silicon and Boron Interstitial Clusters in Transient Enhanced Diffusion Cowern, N.E.B., Mannino, G., Roozeboom, F., van Berkum, J.G.M, Colombeau, B., Claverie, A. Electrochemical Society
5 国際会議録 Doping and Mobility Profiles in Defect-Engineered Ultra-Shallow Junctions : Bulk and SOI Smith, A.J., Colombeau, B., Gwilliam, R., Collart, E., Cowern, N.E.B., Sealy, B.J. Materials Research Society	11 国際会議録 Monte Carlo Analysis Of The Evolution From Point To Extended Interstitial Type Defects in Crystalline Silicon Claverie, Alain, Cristiano, Filadelfo, Colombeau, Benjamin, Cowern, Nicholas E.B. Materials Research Society
6 国際会議録 Effect of the Ge Preamorphization Dose on the Thermal Evolution of End of Range Defects Colombeau, B., Cristiano, F., Marrot, J.-C., Assayag, G. Ben, Claverie, A. Materials Research Society	12 国際会議録 Dopant Diffusion in Amorphous Silicon Duffy, R., Venezia, V.C., Heringa, A., Hopstaken, M.J.P., Maas, G.C.J., Dao, T., Tamminga, Y., Roozeboom, F. Materials Research Society

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