Relaxed SiGe Layers With High Ge Content by Compliant Substrates

Relaxed SiGe Layers With High Ge Content by Compliant Substrates

著者名:

Yin, H.

掲載資料名:

CMOS front-end materials and process technology : symposium held April 22-24, 2003, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

765

発行年:

2003

開始ページ:

147

終了ページ:

152

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558997028 [1558997024]

言語:

英語

請求記号:

M23500/765

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014423
シリーズID:	PA00000011
会議名:	Symposium on CMOS front-end materials and process technology
回次:	2003
会議開催地:	San Francisco, CA, USA
会議開催年:	2003.04.22-2003.04.24

類似資料:

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2 国際会議録 Interference-enhanced Raman Scattering in Strain Characterization of Ultra-Thin Strained SiGe and Si Films on Insulator Yin, Haizhou, Hobart, K.D., Shieh, S.R., Peterson, R.L., Duffy, T.S., Sturm, J.C. Materials Research Society	8 国際会議録 Relaxation Mechanisms of Strained SiGe Films Bonded to High and Low Viscosity Oxides Hobart, K.D., Kub, F.J., Fatemi, M., Twigg, M.E., Thompson, P.E., Kuan, T.S., Inoki, C.K. Electrochemical Society
3 国際会議録 Relaxation of a Strained Elastic Film on a Viscous Layer Huang, R., Yin, H., Liang, J., Hobart, K.D., Sturm, J.C., Suo, Z. Materials Research Society	9 国際会議録 Strain Relaxation of Ion-Implanted Strained Silicon on Relaxed SiGe Crosby, R.T., Jones, K.S., Law, M.E., Saavedra, A.F., Hansen, J.L., Larsen, A.N., Liu, J. Materials Research Society
4 国際会議録 Island Scaling Effects on Photoluminescence of Strained SiGe/Si(100) Peterson, Rebecca L., Yin, Haizhou, Sturm, J.C. Materials Research Society	10 国際会議録 Impact of the Ge Content on the Radiation Hardness of Heterojunction Diodes in SiGe Strained Layers Ohyama, H., Simoen, E., Claeys, C., Takami, Y., Hayama, K., Hakata, T., Tokuyama, J., Kobayashi, K., Sunaga, H., … MRS - Materials Research Society
5 国際会議録 63 Thermal Stability of a Novel Graded Layer for Relaxed SiGe/Si Heteroepitaxy Wong, L.H., Wong, C.C., Ferraris, C., White, T.J., Liu, J.P., Chan, L., Sohn, O.K., Hsia, L. C. Electrochemical Society	11 国際会議録 Suppression of Boron Transient-Enhanced Diffusion in SiGe HBTs by Carbon Incorporation Lanzerotti, L. D., Sturm, J. C., Stach, E., Hull, R., Buyuklimanli, T., Magee, C. MRS - Materials Research Society
6 国際会議録 Microstructural Studies of Co Silicide Layers Formed on SiGe and SiGeC Jin, S., Bender, H., Donaton, R. A., Maex, K., Vantomme, A., Langouche, G., Amour, A. St., Sturm, J. C. MRS - Materials Research Society	12 国際会議録 Relaxed SiGe On Insulator Fabricated via Wafer Bonding and Layer Transfer: Etch-back and Smart-cut Alternatives Taraschi, G., Cheng, Z.-Y., Currie, M.T., Leitz, C.W., Langdo, T.A., Lee, M.L., Pitera, A., Fitzgerald, E.A., … Electrochemical Society

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