High-k Materials for Advanced Gate Stack Dielectrics: A Comparison of ALCVD and MOCVD as Deposition Technologies
- 著者名:
- 掲載資料名:
- CMOS front-end materials and process technology : symposium held April 22-24, 2003, San Francisco, California, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 765
- 発行年:
- 2003
- 開始ページ:
- 47
- 終了ページ:
- 58
- 総ページ数:
- 12
- 出版情報:
- Warrendale, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558997028 [1558997024]
- 言語:
- 英語
- 請求記号:
- M23500/765
- 資料種別:
- 国際会議録
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3
国際会議録
13 High-k Gate Stack Engineering - towards Meeting Low Standby Power and High Performance Targets
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Materials Research Society |
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Materials Research Society |
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Materials Research Society |
Materials Research Society |