Effects of Pre-Process Temperature Stressing on AlGaN/GaN HEMT Structures | 東京工業大学附属図書館文献データベース

Blank Cover Image

Effects of Pre-Process Temperature Stressing on AlGaN/GaN HEMT Structures

著者名:

Yannuzzi, Mark J.

Fitch, Robert C.

Jessen, Gregg H.

Gillespie, James K.

Crespo, Antonio

Jenkins, Thomas J.

Reynolds, Donald C.

さらに 5 件

掲載資料名:

New applications for wide-bandgap semiconductors : symposium held April 22-24, 2003, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

764

発行年:

2003

開始ページ:

305

終了ページ:

314

総ページ数:

10

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558997011 [1558997016]

言語:

英語

請求記号:

M23500/764

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014422
シリーズID:	PA00000011
会議名:	Symposium on new applications for wide-bandgap semiconductors
回次:	2003
会議開催地:	San Francisco, CA, USA
会議開催年:	2003.04.22-2003.04.24

類似資料:

1 国際会議録 Dramatic Improvements in AIGaN/GaN HEMT Device Isolation Characteristics After UV-Ozone Pre-Treatment Moser, N., Fitch, R., Via, D., Crespo, A., Yannuzzi, M., Jessen, G., Gillespie, J., Luo, B., Ren, F., Abernathy, C., … Electrochemical Society	7 国際会議録 Highly Sensitive Hydrogen Sensor Using Pt Nanoparticles Coated ZnO Single and Multiple Nanorods H. T. Wang, B. S. Kang, F. Ren, J. Jun. J. Lin, L. C. Tien, P. W. Sadik, D. P.Norton, L. F. Voss, S. J. Pearton, R. C. … Electrochemical Society
2 国際会議録 Effect of Silicon Nitride PECVD Growth on AlGaN/GaN HEMT Dispersion and Breakdown Characteristics Fitch, R., Gillespie, J., Via, D., Agresta, D., Jenkins, T., Jessen, G., Moser, N., Crespo, A., Dabiran, A., Osinsk, A. Electrochemical Society	8 国際会議録 Pulse Testing of AlGaN/GaN HEMT Baca, A. G., Kim, Y.M., Marsh, P.F., Armendariz, M.G., Sandoval, C.E., Allerman, A.A., Kurtz, S.R., Overberg, M.E., … Electrochemical Society
3 国際会議録 Hydrogen-Induced Reversible Changes in Drain Current of Pt-Gated AlGaN/GaN High Electron Mobility Transistors (HEMT) H. T. Wang, B. S. Kang, F. Ren, R. C. Fitch, J. K. Gillespie, N. Moser, G. Jessen, T. Jenkins, R. Dettmer, D. Via, A. … Electrochemical Society	9 国際会議録 Improved Oxide Passivation of AlGaN/GaN High Electron Mobility Transistors T. Anderson, B. P. Gila, M. Hiad, A. H. Onstine, R. Frazier, G. T. Thaler, A. Herrero, E. Lambers, C. R. Abernathy, S. … Electrochemical Society
4 国際会議録 Novel Oxides for Passivating AlGaN/GaN HEMT and Providing Low Surface State Densities at Oxide/GaN Interface Ren, F., Luo, B., Kim, J., Mehandru, R., Gila, B. P., Onstine, A. H., Abernathy, C. R., Pearton, S. J., Fitch, R., … Materials Research Society	10 国際会議録 GaN-Based Devices for Reliable Operation at Very High Temperatures A. M. Dabiran, A. V. Osinsky, P. P. Peter, R. C. Fitch, N. Moser, A. Crespo, T. J. Anderson, F. Ren, R. Khanna, L. … Electrochemical Society
5 国際会議録 Carrier Trapping and Thermal Effects in GaN-based High-electron Mobility Transistors Dabiran, A.M., Osinsky, A., Chow, P.P., Zhang, Z., Madjar, A., Osinsky, S., Hwang, J.C.M., Fitch, R.C., Gillespie, J., … Electrochemical Society	11 国際会議録 Non-symmetric AlGaN directional coupler switch analysis Crespo, Antonio, Karim, Mohammad SPIE
6 国際会議録 Progress in Novel Oxides for Gate Dielectrics And Surface Passivation of GaN/AlGaN Heterostructure Field Effect Transistors Abernathy, C.R., Gila, B.P., Onstine, A.H., Pearton, S.J., Kim, J., Luo, B., Mehandru, R., Ran, F., Gillespie, J.K., … Electrochemical Society	12 国際会議録 Microscopic Degradation Analysis of RF-Stressed AlGaN/GaN HEMTs F. Gütle, M. Baeumler, M. Dammann, M. Cäsar, H. Walcher Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12