Novel Oxides for Passivating AlGaN/GaN HEMT and Providing Low Surface State Densities at Oxide/GaN Interface
- 著者名:
Ren, F. Luo, B. Kim, J. Mehandru, R. Gila, B. P. Onstine, A. H. Abernathy, C. R. Pearton, S. J. Fitch, R. Gillespie, J. Jenkins, T. Sewell, J. Via, D. Crespo, A. Irokawa, Y. - 掲載資料名:
- New applications for wide-bandgap semiconductors : symposium held April 22-24, 2003, San Francisco, California, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 764
- 発行年:
- 2003
- 開始ページ:
- 291
- 終了ページ:
- 304
- 総ページ数:
- 14
- 出版情報:
- Warrendale, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558997011 [1558997016]
- 言語:
- 英語
- 請求記号:
- M23500/764
- 資料種別:
- 国際会議録
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9
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Electrical Characterization of GaN Metal Oxide Semiconductor Diode Using Sc2O3 as the Gate Oxide
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