Electrical Characterization of Defects Introduced in 4H-SiC During High Energy Proton Irradiation and Their Annealing Behavior

Electrical Characterization of Defects Introduced in 4H-SiC During High Energy Proton Irradiation and Their Annealing Behavior

著者名:

掲載資料名:

New applications for wide-bandgap semiconductors : symposium held April 22-24, 2003, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

764

発行年:

2003

開始ページ:

203

終了ページ:

208

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558997011 [1558997016]

言語:

英語

請求記号:

M23500/764

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014422
シリーズID:	PA00000011
会議名:	Symposium on new applications for wide-bandgap semiconductors
回次:	2003
会議開催地:	San Francisco, CA, USA
会議開催年:	2003.04.22-2003.04.24

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