HVPE-Grown AlGaN/GaN HEMTs | 東京工業大学附属図書館文献データベース

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HVPE-Grown AlGaN/GaN HEMTs

著者名:

さらに 4 件

掲載資料名:

New applications for wide-bandgap semiconductors : symposium held April 22-24, 2003, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

764

発行年:

2003

開始ページ:

45

終了ページ:

56

総ページ数:

12

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558997011 [1558997016]

言語:

英語

請求記号:

M23500/764

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014422
シリーズID:	PA00000011
会議名:	Symposium on new applications for wide-bandgap semiconductors
回次:	2003
会議開催地:	San Francisco, CA, USA
会議開催年:	2003.04.22-2003.04.24

類似資料:

1 国際会議録 AlGaN/GaN Structures Grown by HVPE: Growth and Characterization Mastro, M. A., Tsvetkov, D. V., Pechnikov, A. I., Soukhoveev, V. A., Gainer, G. H., Usikov, A., Dmitriev, V., Luo, B., … Materials Research Society	7 国際会議録 Oxide Dielectrics for Reliable Passivation of AlGaN/GaN HEMTs and Insulated Gates B. Gila, M. Hlad, T. Anderson, J. Chen, K. Allums, A. Gerger, A. Herrero, S. Jang, B. Kang, C. R. Abernathy, F. Ren, S. … Electrochemical Society
2 国際会議録 Lattice Constant Variation in GaN:Si Layers Grown by HVPE Usikov, A., Kovalenkov, O.V., Mastro, M.M., Tsvetkov, D.V., Pechnikov, A.I., Soukhoveev, V.A., Shapovalova, Y.V., … Materials Research Society	8 国際会議録 Determination of AlGaN/GaN HEMT Reliability Using Optical Pumping as a Characterization Method D. Cheney, R. Deist, B. Gila, F. Ren, P. Whiting, J. Navales, E. Douglas, S. Pearton Materials Research Society
3 国際会議録 Surface Passivation of AlGaN Terminated and GaN Terminated HEMT Structures Studied by XPS Gila, B.P., Lambers, E., Luo, B., Onstine, A.H., Allums, K.K., Abernathy, C.R., Ren, F., Pearton, S.J. Materials Research Society	9 国際会議録 High Current Bulk GaN Schottky Rectifier Ip, K., Baik, K. H., Luo, B., Ren, F., Pearton, S. J., Park, S. S., Park, Y. J., Zhang, A. P. Electrochemical Society
4 国際会議録 AIN/GaN and AlGaN/GaN Heterostructures Grown by HVPE on SiC Substrates Melnik, Yu. V., Nikolaev, A. E., Stepanov, S. I., Zubrilov, A. S., Nikitina, I. P., Vassilevski, K. V., Tsvetkov, D. V., … MRS - Materials Research Society	10 国際会議録 Micro-Raman Studies of Thermal Stress Effects in GaN Heteroepitaxial Layers and Self-Heating Effects in AlGaN/GaN HEMT Structures J. Kim, J. A. Freitas, J. Mittereder, E. R. Glaser, D. S. Katzer, S. J. Pearton, F. Ren, S. Guo, B. Albert Electrochemical Society
5 国際会議録 HVPE-Grown AlN-GaN Based Structures for UV Spectral Region USIKOV, A. S., MELNIK, YU., PECHNIKOV, A. I., SOUKHOVEEV, V. A., KOVALENKOV, O. V., SHAPOVALOVA, E., KARPOV, S. YU., … Kluwer Academic Publishers	11 国際会議録 Gaeless AlGaN/GaN HEMT Response to Block Co-Polymers Kang, B. S., Louche, G., Duran, R S., Gnanou, Y., Pearton, S. J., Ren, F. Electrochemical Society
6 国際会議録 Novel Oxides for Passivating AlGaN/GaN HEMT and Providing Low Surface State Densities at Oxide/GaN Interface Ren, F., Luo, B., Kim, J., Mehandru, R., Gila, B. P., Onstine, A. H., Abernathy, C. R., Pearton, S. J., Fitch, R., … Materials Research Society	12 国際会議録 Hydrogen-Induced Reversible Changes in Drain Current of Pt-Gated AlGaN/GaN High Electron Mobility Transistors (HEMT) H. T. Wang, B. S. Kang, F. Ren, R. C. Fitch, J. K. Gillespie, N. Moser, G. Jessen, T. Jenkins, R. Dettmer, D. Via, A. … Electrochemical Society

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