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Gate Current Modeling for Insulating Gate III-N Heterostructure Field-Effect Transistors

著者名:
Clarke, Frederick W.
Ho, Fat Duen
Khan, M.Asif
Simin, Grigory
Yang, J.
Gaska, Remis
Shur, Michael S.
Deng, Jianyu
Karmalkar, S.
さらに 4 件
掲載資料名:
GaN and related alloys - 2002 : symposium held December 2-6, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
743
発行年:
2002
開始ページ:
561
終了ページ:
566
総ページ数:
6
出版情報:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558996809 [155899680X]
言語:
英語
請求記号:
M23500/743
資料種別:
国際会議録

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