Growth of Thick InN by Molecular Beam Epitaxy

Growth of Thick InN by Molecular Beam Epitaxy

著者名:

Lu, Hai

掲載資料名:

GaN and related alloys - 2002 : symposium held December 2-6, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

743

発行年:

2002

開始ページ:

317

終了ページ:

322

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558996809 [155899680X]

言語:

英語

請求記号:

M23500/743

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014403
シリーズID:	PA00000011
会議名:	Symposium on GaN and related alloys
回次:	2002
会議開催地:	Boston, MA, USA
会議開催年:	2002.12.02-2002.12.06

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2 国際会議録 Study of Interface Properties of InN and InN-Based Heterostructures by Molecular Beam Epitaxy Lu, Hai, Schaff, William J., Eastman, Lester F., Wood, Colin Materials Research Society	8 国際会議録 Pressure Dependence of Optical Transitions In In-Rich Group III-Nitride Alloys Li, S.X., Wu, J., Walukiewicz, W., Shan, W., Haller, E.E., Lu, Hai, Schaff, William J. Materials Research Society
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4 国際会議録 III-Nitrides by Molecular Beam Epitaxy for Longer and Shorter Wavelengths (Invited) Schaff, W. J., Lu, H., Hwang, J., Wu, H., Chen, X., Eastman, L. F. Electrochemical Society	10 国際会議録 Temperature dependence of light-output performance of InGaN/GaN multiple-quantum-well light-emitting diodes with various In compositions Huh, C., Schaff, W/J., Eastman, Lester F., Park, S.-J. SPIE - The International Society of Optical Engineering
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6 国際会議録 Carrier Recombination, Relaxation, and Transport Dynamics in InN Chen, Fei, Cartwright, Alexander N., Lu, Hai, Schaff, William J. Materials Research Society	12 国際会議録 Ultrafast Raman scattering studies of electron transport in a thick InN film grown on GaN (Invited Paper) [6118-13] Tsen, K. T., Poweleit, C., Ferry, D. K., Lu, H., Schaff, W J SPIE - The International Society of Optical Engineering

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