Lattice Constant Variation in GaN:Si Layers Grown by HVPE
- 著者名:
Usikov, A. Kovalenkov, O.V. Mastro, M.M. Tsvetkov, D.V. Pechnikov, A.I. Soukhoveev, V.A. Shapovalova, Y.V. Gainer, G.H. - 掲載資料名:
- GaN and related alloys - 2002 : symposium held December 2-6, Boston, Massachusetts, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 743
- 発行年:
- 2002
- 開始ページ:
- 231
- 終了ページ:
- 236
- 総ページ数:
- 6
- 出版情報:
- Warrendale, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558996809 [155899680X]
- 言語:
- 英語
- 請求記号:
- M23500/743
- 資料種別:
- 国際会議録
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12
国際会議録
Variation of in-plane lattices constant of Ge islands during MBE growth on Si and SiO2 surfaces
SPIE-The International Society for Optical Engineering |