Blank Cover Image

Transport and Chemical Mechanisms in GaN Hydride Vapor Phase Epitaxy

著者名:
Karpov, Sergey Yu.
Segal, Alexander S.
Zimina, Darya V.
Smirnov, Sergey A.
Sid'ko, Alexander P.
Kondratyev, Alexey V.
Makarov, Yuri N.
Martin, Denis
Wagner, Volker
Ilegems, Marc
さらに 5 件
掲載資料名:
GaN and related alloys - 2002 : symposium held December 2-6, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
743
発行年:
2002
開始ページ:
225
終了ページ:
230
総ページ数:
6
出版情報:
Warrendale, Pa.: Materials Research Society
ISSN:
02729172
ISBN:
9781558996809 [155899680X]
言語:
英語
請求記号:
M23500/743
資料種別:
国際会議録

類似資料:

1 国際会議録 Microstructure of ELO-GaN Layers Grown by Hydride Vapor Phase Epitaxy

Gradecak, Silvija, Wagner, Volker, Ilegems, Marc, Bobard, Fabienne, Stadelmann, Pierre

Materials Research Society
7 国際会議録 Surface Segregation and Composition Fluctuations in Ammonia MBE and MOVPE of InGaN

Karpov, Sergey Yu., Talalaev, Roman A., Yakovlev, Eugene V., Makarov, Yuri N.

Materials Research Society
2 国際会議録 MODELING OF SiGe EPITAXIAL GROWTH IN A WIDE RANGE OF GROWTH CONDITIONS

Segal, A., Sid'ko, A.P., Karpov, S.Yu., Makarov, Yu.N.

Electrochemical Society
8 国際会議録 Inverse-Computation Design of a SiC Bulk Crystal Growth System

Kulik, Alexey V., Demina, Sventlana E., Kochuguev, Sergey K., Ofengeim, Dmitry Kh., Karpov, Sergey Yu., Vorob'ev, Andrey …

Materials Research Society
3 国際会議録 MODELING OF SiGe EPITAXIAL GROWTH IN A WIDE RANGE OF GROWTH CONDITIONS

Segal, A., Sid'ko, A.P., Karpov, S.Yu., Makarov, Yu. N.

Electrochemical Society
9 国際会議録 Segregation Effects and Bandgap Engineering in InGaN Quantum-Well Heterostructures

Bulashevich, Kirill A., Karpov, Sergey Yu., Talalaev, Roman A., Evstratov, Igor Yu., Makarov, Yuri N.

Materials Research Society
4 国際会議録 Modeling of SiGe Epitaxial Growth in a Wide Range of Growth Conditions

Segal, A.S., Sid'ko, A.P., Karpov, S.Yu., Makarov, Yu N.

Electrochemical Society
10 国際会議録 Global Model of Silicon Chemical Vapor Deposition in Centura Reactors

Segal, A.S., Kondratyev, A.V., Galyskov, A.O., Kampov, S.Yu., Makarov, Yu.N., Sieberm, W., Siarek, P., Lowmy, S.

Electrochemical Society
5 国際会議録 GaN Laterally Overgrown on Sapphire by Low Pressure Hydride Vapor Phase Epitaxy

Napierala, J., Martin, D., Buehlmann, H.J., Gradecak, S., Ilegems, M.

Trans Tech Publications
11 国際会議録 A quantitative model of surface segregation in III-V ternary compounds

Kaprov, Sergey Yu., Makarov, Yuri N.

MRS-Materials Research Society
6 国際会議録 Growth and Characterization of Bulk GaN by Ga Vapor Transport

Konkapaka, Phanikumar, Wu, Huaqiang, Makarov, Yuri, Spencer, Michael G.

Materials Research Society
12 国際会議録 GaN p-n Structures Grown by Hydride Vapor-Phase Epitaxy

Nikolaev, A. E., Melnik, Yu. V., Kuznetsov, N. I., Strelchuk, A. M., Kovarsky, A. P., Vassilevski, K. V., Dmitriev, V. …

MRS - Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12