Epitaxial Growth of AlN on 6H-SiC (1120) by Molecular-Beam Epitaxy and Effect of Low-Temperature Buffer Layer

Epitaxial Growth of AlN on 6H-SiC (1120) by Molecular-Beam Epitaxy and Effect of Low-Temperature Buffer Layer

著者名:

掲載資料名:

GaN and related alloys - 2002 : symposium held December 2-6, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

743

発行年:

2002

開始ページ:

139

終了ページ:

144

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558996809 [155899680X]

言語:

英語

請求記号:

M23500/743

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014403
シリーズID:	PA00000011
会議名:	Symposium on GaN and related alloys
回次:	2002
会議開催地:	Boston, MA, USA
会議開催年:	2002.12.02-2002.12.06

類似資料:

1 国際会議録 Heteroepitaxial Growth of Insulating AlN on 6H-SiC by MBE Onojima, N., Suda, J., Matsunami, H. Trans Tech Publications	7 国際会議録 Molecular Beam Epitaxy of GaN on Lattice-matched ZrB2 Substrates Using Low Temperature GaN and AlN Nucleation Layers Armitage, Rob, Nishizono, Kazuhiro, Suda, Jun, Kimoto, Tsunenobu Materials Research Society
2 国際会議録 Heteroepitaxial Growth of Insulating AlN on 6H-SiC by MBE Onojima, N., Suda, J., Matsunami, H. Trans Tech Publications	8 国際会議録 Growth of SiC on 6H-SiC {0114} Substrates by Gas Source Molecular Beam Epitaxy Nakamura, S., Hatayama, T., Kimoto, T., Fuyuki, T., Matsunami, H. Trans Tech Publications
3 国際会議録 Towards High-Quality AlN/SiC Hetero-Interface by Controlling Initial Processes in Molecular-Beam Epitaxy Onojima, N., Kaido, J., Suda, J., Kimoto, T., Matsunami, H. Trans Tech Publications	9 国際会議録 SiC Lateral Super-Junction Diodes Fabricated by Epitaxial Growth Miura, M., Nakamura, S.-i., Suda, J., Kimoto, T., Matsunami, H. Trans Tech Publications
4 国際会議録 Lattice Relaxation of AlN Buffer on Surface-Treated SiC in Molecular-Beam Epitaxy for Growth of High-Quality GaN Suka, Jun, Miura, Kouhei, Honaga, Misako, Onojima, Norio, Nishi, Yusuke, Matsunami, Hiroyuki Materials Research Society	10 国際会議録 GaN Epitaxial Growth by Molecular Beam Epitaxy Utilizing AlGaN Buffer Layer With Nanopipes Yun, F., He, L., Reshchikov, M. A., Morkoc, H., Jasinski, J., Liliental-Weber, Z. Materials Research Society
5 国際会議録 Either Step-Flow or Layer-by-Layer Growth for AlN on SiC (0001)Substrates Suda, Jun, Onojima, Norio, Kimoto, Tsunenobu, Matsunami, Hiroyuki Materials Research Society	11 国際会議録 Molecular Beam Epitaxy of GaN on Lattice-Matched Zirconium Diboride Substrates Using Low-Temperature GaN and AIN Nucleation Layers Armitage, R., Suda, J., Kimoto, T. Electrochemical Society
6 国際会議録 4H-SiC (1120) Epitaxial Growth Kimoto, T., Yamamoto, T., Chen, Z. Y., Yano, H., Matsunami, H. Trans Tech Publications	12 国際会議録 Epitaxial growth of AlN on Si substrates with intermediate 3C-SiC as buffer layers Hong, S. Q., Liaw, H. M., Linthicum, K., Davis, R. F., Fejes, P., Zollner, S., Kottke, M., Wilson, S. R. MRS-Materials Research Society

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