Electrical Instability Suppression in 4H-SiC Power MESFETs
- 著者名:
Tucker, J.B. Beaupre, R.A. Zhang, A.P. Garrett, J.L. Rowland, L.B. Kaminsky, E.B. Kretchmer, J.W. Vertiatchikh, A. Eastman, L.F. Allen, A.F. Edward, B. - 掲載資料名:
- Silicon carbide 2002 -- materials, processing and devices : symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 742
- 発行年:
- 2003
- 開始ページ:
- 347
- 終了ページ:
- 362
- 総ページ数:
- 16
- 出版情報:
- Warrendale, Pa.: Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558996793 [1558996796]
- 言語:
- 英語
- 請求記号:
- M23500/742
- 資料種別:
- 国際会議録
類似資料:
Trans Tech Publications |
Materials Research Society |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
4
国際会議録
Propagation of Current-Induced Stacking Faults and Forward Voltage Degradation in 4H-SiC PiN Diodes
Trans Tech Publications |
Trans Tech Publications |
5
国際会議録
Propagation of Current-Induced Stacking Faults and Forward Voltage Degradation in 4H-SiC PiN Diodes
Trans Tech Publications |
Trans Tech Publications |
Electrochemical Society |
12
国際会議録
Barrier Material Improvement in AlGaN/GaN Microwave Transistors Under Gamma Irradiation Treatment
Materials Research Society |