Contact Resistivity of Al/Ti Ohmic Contacts on p-Type Ion Implanted 4H- and 6H-SiC | 東京工業大学附属図書館文献データベース

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Contact Resistivity of Al/Ti Ohmic Contacts on p-Type Ion Implanted 4H- and 6H-SiC

著者名:

Nipoti, Roberta

Moscatelli, Francesco

Scorzoni, Andrea

Poggi, Antonella

Cardinali, Gian Carlo

Raynaud, christophe

Planson, Dominique

Locatelli, Marie-Laure

Chante, Jean-Pierre

さらに 5 件

掲載資料名:

Silicon carbide 2002 -- materials, processing and devices : symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

742

発行年:

2003

開始ページ:

303

終了ページ:

308

総ページ数:

6

出版情報:

Warrendale, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558996793 [1558996796]

言語:

英語

請求記号:

M23500/742

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014402
シリーズID:	PA00000011
会議名:	Symposium on silicon carbide
回次:	2002
会議開催地:	Boston, MA, USA
会議開催年:	2002.12.02-2002.12.04

類似資料:

1 国際会議録 Contact Resistivity and Barrier Height of Al/Ti Ohmic Contacts on p-Type Ion Implanted 4H- and 6H-SiC Scorzoni, A., Moscatelli, F., Poggi, A., Cardinali, G.C., Nipoti, R. Trans Tech Publications	7 国際会議録 Ni-Silicide Contacts to 6H-SiC: Contact Resistivity and Barrier Height on Ion Implanted n-Type and Barrier Height on p-Type Epilayer Moscatelli, F., Scorzoni, A., Poggi, A., Canino, M., Nipoti, R. Trans Tech Publications
2 国際会議録 Al/Ti Ohmic Contacts to p-Type Ion-Implanted 6H-SiC: Mono- and Two- Dimensional Analysis of TLM Data Moscatelli, F., Scorzoni, A., Poggi, A., Cardinali, G.C., Nipoti, R. Trans Tech Publications	8 国際会議録 Study of 4H-SiC High-Voltage Bipolar Diodes under Reverse Bias Using Electrical and OBIC Characterization Isoird, K., Lazar, M., Locatelli, M.-L., Raynaud, C., Planson, D., Chante, J.P. Trans Tech Publications
3 国際会議録 The Role of the Ion Implanted Emitter State on 6H-SiC Power Diodes Behavior. A Statistical Study Lazar, M., Cardinali, G., Raynaud, C., Poggi, A., Planson, D., Nipoti, R., Chante, J.P. Trans Tech Publications	9 国際会議録 Study of 4H-SiC High-Voltage Bipolar Diodes under Reverse Bias Using Electrical and OBIC Characterization Isoird, K., Lazar, M., Locatelli, M.-L., Raynaud, C., Planson, D., Chante, J.P. Trans Tech Publications
4 国際会議録 A Comparative Study of High-Temperature Aluminum Post-Implantation Annealing in 6H- and 4H-SiC, Non-Uniform Temperature Effects Lazar, M., Raynaud, C., Planson, D., Locatelli, M.-L., Isoird, K., Ottaviani, L., Chante, J.P., Nipoti, R., Poggi, A., … Trans Tech Publications	10 国際会議録 Measurements of Charge Collection Efficiency of p+/n Junction SiC Detectors Moscatelli, F., Scorzoni, A., Poggi, A., Bruzzi, M., Lagomarsino, S., Mersi, S., Sciortino, S., Lazar, M., Placido, A. … Trans Tech Publications
5 国際会議録 A Comparative Study of High-Temperature Aluminum Post-Implantation Annealing in 6H- and 4H-SiC, Non-Uniform Temperature Effects Lazar, M., Raynaud, C., Planson, D., Locatelli, M.-L., Isoird, K., Ottaviani, L., Chante, J.P., Nipoti, R., Poggi, A., … Trans Tech Publications	11 国際会議録 SiC-Based Current Limiter Devices Chante, J.P., Tournier, D., Planson, D., Raynaud, C., Lazar, M., Locatelli, M.L., Brosselard, P. Trans Tech Publications
6 国際会議録 Extraction of the Schottky Barrier Height for Ti/Al Contacts on 4H-SiC from I-V and C-V Measurements Moscatelli, F., Scorzoni, A., Poggi, A., Cardinali, G.C., Nipoti, R. Trans Tech Publications	12 国際会議録 Interracial Properties of SiO2 Grown on 4H-SiC: Comparison between N2O and Wet O2 Oxidation Ambient Poggi, A., Moscatelli, F., Scorzoni, A., Marino, G., Nipoti, R., Sanmartin, M. Trans Tech Publications

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